Heavy! Jiang Fengyi’s team project won the first prize of the National Natural Science Award! There are also many projects in the lighting field that have won awards.

On July 8, 2026, the 2025 National Science and Technology Awards were announced in Beijing. A total of 258 projects were selected for the three awards, including 51 National Natural Science Awards, including 3 first prizes, and 48 second prizes; 58 National Technological Invention Awards, including 3 first prizes, and 55 second prizes; and 149 National Science and Technology Progress Awards, including 3 special prizes, 13 first prizes, and 133 second prizes.

Among them, the LED lighting field has won multiple awards.

The project of Academician Jiang Fengyi's team won the first prize of the National Natural Science Award

The "V-defect three-dimensional PN junction and application" project completed by the team of Academician Jiang Fengyi of Nanchang University won the first prize of the National Natural Science Award.

The project belongs to applied basic research, deeply exploring silicon-based gallium nitride LED, jumping out of the extension of foreign technical routes, embarking on a new path of independent research and development, proposing new theoretical methods, achieving a leap in technological level, and achieving commercialization starting from basic research.

The project found that in the quantum well region of this material, the large-size V defect three-dimensional structure formed by dislocations has beneficial effects such as enhancing hole injection into the quantum well and improving the quality of the quantum well, breaking the traditional perception of "the fewer dislocation defects, the better/the smaller the better". A V-defect three-dimensional PN junction theoretical method is proposed, which makes the PN junction interface develop from two-dimensional to three-dimensional. The path of hole injection into the quantum well changes from a polar surface with a high barrier to a semi-polar surface with a low barrier, making V defects from "big harm" to "minor harm" to "big use". As a result, the light efficiency of yellow LED, gallium nitride red LED and blue-green LED electrical injection efficiency are greatly improved.

The project has pioneered a pure chip LED lighting technology route, and the products have been applied in batches to scenes such as road and bridge lighting and ambient lighting. The project shows that chips are used in batches of special equipment. The project achieved wafer-level integration of silicon-based gallium nitride LEDs and silicon-based circuits, and successfully developed micro-displays and the first yellow-light AR glasses.

It is worth mentioning that the theoretical methods proposed by the project on the non-consensus route have been recognized by international peers and have been promoted and applied to a large number of consensus routes, improving their technical level and promoting the development of semiconductor luminescence disciplines and semiconductor lighting display industries.

It is worth mentioning that this National Science and Technology Award has selected three first prizes for the National Natural Science Award for the first time, reflecting the effectiveness of China’s strategic deployment of strengthening basic research and focusing on original innovation.

This award is not only an answer sheet submitted by Academician Jiang Fengyi’s team in terms of knowledge innovation and technological innovation, but also a vivid reflection of the teachers and students of Nanchang University practicing science and technology to be self-reliant and self-reliant.

Introduction to the main person who completed the project

Jiang Fengyi is a professor at Nanchang University, director of Nanchang Laboratory, and academician of the Chinese Academy of Sciences. The first person to complete the project. He has long been committed to the research of silicon-based gallium nitride LEDs and has been pursuing light for more than 30 years. He has led the team to achieve breakthroughs in the entire chain from basic theory to industrialization.

Zhang Jianli, researcher at Nanchang University, chief scientist of Nanchang Laboratory. The second person to complete the project.

Xu Longquan, professor at Nanchang University, deputy director of Nanchang Laboratory. The third person to complete the project.

Quan Chunxuan, researcher at Nanchang University. The fourth person to complete the project.

Wu Xiaoming, researcher at Nanchang University, chief engineer of Nanchang Laboratory. The fifth person to complete the project.

Second Prize of National Technology Invention Award

After sorting, 2025 In the annual National Science and Technology Awards, in addition to the first prize of the Natural Science Award for Academician Jiang Fengyi’s team, there are also a number of semiconductor lighting-related projects that have won awards:

Project Name: Key Substrate Technology for Gallium Nitride-based Light-Emitting Devices

Main Completers: Wang Xinqiang, Zhang Guoyi, Kang Kai, Li Dongsan, Yu Tongjun, and Yuan Ye are mainly completed by: Peking University, Dongguan Zhongli Semiconductor Technology Co., Ltd., Guangdong Zhongtu Semiconductor Technology Co., Ltd., Northern Huachuang Microelectronics Equipment Co., Ltd., Songshan Lake Materials Laboratory

GaN-based light-emitting devices have triggered a new round of revolution in lighting and display technology and have become the commanding heights of global technology and industrial competition. The substrate is the core foundation of gallium nitride-based light-emitting devices. The project team takes the innovation of gallium nitride-based light-emitting device substrate technology as its main research line, formed a key substrate technology system with independent intellectual property rights, developed a series of substrate products and supporting equipment, significantly improved device performance, and realized the leap from "controlled by others" to "independent leadership" of key technologies, providing solid support for my country's dominant position in the global green lighting and display industry.

Project name: Preparation of high-performance aluminum nitride-based semiconductor materials and key technologies for optoelectronic chips

Main completion persons: Li Dabing, Sun Xiaojuan, Jiang Ke, WU LIANG, Xu Chunyang, Ben Jianwei Main completion units: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Aoche Optoelectronics Technology Co., Ltd., and Chuyun Precision Technology Co., Ltd.

This project conquers the high thermal conductivity substrate technology of high-frequency radio frequency integrated circuits, greatly improves the heat dissipation capacity of high-power radio frequency devices, enhances the power and stability of radio frequency equipment, and is used for high-power radio frequency and ultraviolet optoelectronic devices.

Source: China Light Network